ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 optimos ? power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? ultra low rds(on) ? 100% avalanche tested ? green product (rohs compliant) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25 c, v gs =10 v 80 a t c =100 c, v gs =10 v 2) 80 pulsed drain current 2) i d,pulse t c =25 c 320 avalanche energy, single pulse e as i d =80a 660 mj gate source voltage v gs 20 v power dissipation p tot t c =25 c 300 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 40 v r ds(on),max (smd version) 3.7 m ? i d 80 a product summary type package marking ipb80n04s2-h4 pg-to263-3-2 2n04h4 ipp80n04s2-h4 pg-to220-3-1 2n04h4 ipi80n04s2-0h4 pg-to262-3-1 2n04h4 pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 rev. 1.1 page 1 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 0.5 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 3) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d = 1 ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.1 3.0 4.0 zero gate voltage drain current i dss v ds =40 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =40 v, v gs =0 v, t j =125 c 2) - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =80 a - 3.5 4.0 m ? v gs =10 v, i d =80 a, smd version - 3.2 3.7 values rev. 1.1 page 2 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 4400 - pf output capacitance c oss - 1800 - reverse transfer capacitance c rss - 480 - turn-on delay time t d(on) -23-ns rise time t r -63- turn-off delay time t d(off) -46- fall time t f -22- gate char g e characteristics 2) gate to source charge q gs -2129nc gate to drain charge q gd -3870 gate charge total q g - 103 148 gate plateau voltage v plateau - 4.9 - v reverse diode diode continous forward current 2) i s - - 80 a diode pulse current 2) i s,pulse - - 320 diode forward voltage v sd v gs =0 v, i f =80 a, t j =25 c - 0.9 1.3 v reverse recovery time 2) t rr v r =20 v, i f = i s , d i f /d t =100 a/s - 195 - ns reverse recovery charge 2) q rr v r =20 v, i f = i s , d i f /d t =100 a/s - 370 - nc 2) defined by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 0.5k/w the chip is able to carry 200a at 25c. for detailed information see application note anps071e at www.infineon.com/optimos t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =20 v, v gs =10 v, i d =80 a, r g =1.3 ? v dd =32 v, i d =80 a, v gs =0 to 10 v rev. 1.1 page 3 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 50 100 150 200 250 300 350 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] rev. 1.1 page 4 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = ( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d = f( v gs ); v ds = 6v g fs = f( i d ); t j = 25c parameter: t j parameter: g fs 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 50 100 150 200 250 300 0246810 v ds [v] i d [a] 5.5 v 6 v 6.5 v 7 v 10 v 2 6 10 14 18 0 80 160 240 320 i d [a] r ds(on) [mw] -55 c 25 c 175 c 0 40 80 120 160 200 240 280 320 234567 v gs [v] i d [a] 0 25 50 75 100 125 150 175 200 0 50 100 150 i d [a] g fs [s] rev. 1.1 page 5 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 9 typ. drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) = f( t j ) v gs(th) = f( t j ); v gs = v ds parameter: i d = 80 a; v gs = 10 v parameter: i d 11 typ. capacitances 12 typical forward diode characteristicis c = f( v ds ); v gs = 0 v; f = 1 mhz if = f(v sd ) parameter: t j 25 c 175 c 10 3 10 2 10 1 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd [v] i f [a] ciss coss crss 10 4 10 3 10 2 0 5 10 15 20 25 30 v ds [v] c [pf] 250 a 1250 a 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] 2 3 4 5 6 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] rev. 1.1 page 6 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 13 avalanche energy 14 typ. gate charge e as = f( t j ) v gs = f( q gate ); i d = 80 a pulsed parameter: i d 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) = f( t j ); i d = 1 ma 80 a 40 a 20 a 0 500 1000 1500 2000 2500 3000 25 75 125 175 t j [c] e as [mj] v gs q gate q gs q gd q g v gs q gate q gs q gd q g 8 v 32 v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 q gate [nc] v gs [v] 36 38 40 42 44 46 48 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] rev. 1.1 page 7 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2008 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non ? infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.1 page 8 2008-02-22
ipb80n04s2-h4 ipp80n04s2-h4, IPI80N04S2-H4 revision history version revision 1.1 revision 1.1 date 22.02.2008 22.02.2008 changes update of side 1 and 10 according to new template update of soa diagram, labelling rev. 1.1 page 9 2008-02-22
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